H10D 64/664
The additional layers comprising a barrier layer between the layer of silicon
Official title: {the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer}
H10D64/664 (The additional layers comprising a barrier layer between the layer of silicon) appears on 516 US grants and 486 published applications in this corpus.
Search patents in H10D- Granted patents
- 516
- Published applications
- 486
- Assignees
- 129
- Inventors
- 879
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 10 | 0 |
| 1999 | 14 | 0 |
| 2000 | 24 | 0 |
| 2001 | 39 | 20 |
| 2002 | 35 | 40 |
| 2003 | 51 | 39 |
| 2004 | 30 | 45 |
| 2005 | 31 | 37 |
| 2006 | 23 | 23 |
| 2007 | 19 | 19 |
| 2008 | 13 | 37 |
| 2009 | 17 | 25 |
| 2010 | 24 | 12 |
| 2011 | 15 | 10 |
| 2012 | 14 | 17 |
| 2013 | 11 | 9 |
| 2014 | 11 | 17 |
| 2015 | 16 | 23 |
| 2016 | 25 | 15 |
| 2017 | 10 | 9 |
| 2018 | 4 | 3 |
| 2019 | 12 | 11 |
| 2020 | 10 | 12 |
| 2021 | 8 | 11 |
| 2022 | 8 | 18 |
| 2023 | 7 | 6 |
| 2024 | 10 | 8 |
| 2025 | 9 | 8 |
| 2026 | 2 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Semiconductor devices14 Apr 2026US 12,604,722 B2Samsung Electronics Co., Ltd.
- Semiconductor device with capping layer16 Dec 2025US 12,501,686 B2Nanya Technology Corporation
- Semiconductor structure and forming method thereof2 Sep 2025US 12,408,409 B2Changxin Memory Technologies, Inc.
- Semiconductor device and method of manufacturing the same26 Aug 2025US 12,402,336 B2Renesas Electronics Corporation
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices20 Aug 2026US 2026/0247954 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and fabrication method thereof6 Aug 2026US 2026/0231506 A1Nanya Technology Corporation
- Semiconductor device and method for preparing the same2 Jul 2026US 2026/0190315 A1Nanya Technology Corporation
- Semiconductor device and method for preparing the same2 Jul 2026US 2026/0190429 A1Nanya Technology Corporation
Most cited
By later US patents
- Method of manufacturing a semiconductor device which includes forming a dummy gate210US 6,054,355 AKabushiki Kaisha Toshiba · 2000
- Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film189US 6,861,356 B2Tokyo Electron Limited · 2005
- Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof161US 6,225,168 B1Advanced Micro Devices, Inc. · 2001
- Enhanced parimutuel wagering148US 7,742,972 B2Longitude LLC · 2010
- Highly conductive composite polysilicon gate for CMOS integrated circuits146US 6,492,694 B2Micron Technology, Inc. · 2002