Semiconductor device and method for preparing the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present disclosure provides a semiconductor device including a source/drain structure, a dielectric layer, first contact structures, a polysilicon stack, and a second contact structure. The source/drain structure is disposed over a semiconductor substrate. The dielectric layer is disposed over the source/drain structure. The first contact structures penetrates through the dielectric layer and the source/drain structure. The second contact structure is disposed over the polysilicon stack. The polysilicon stack and the second contact structure are disposed between two of the plurality of first contact structures. Each of the first contact structures includes a first liner and a first conductive layer surrounding by the first liner.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate, comprising an array area and a periphery area;
- a source/drain structure disposed over the semiconductor substrate;
- a dielectric layer disposed over the source/drain structure;
- a first contact structure, disposed over the periphery area, penetrating through the dielectric layer, comprising:
- a first liner, including tantalum, tantalum nitride, or the combination thereof;
- and
- a first conductive layer, disposed over the first liner, including Cu;
- a polysilicon stack, disposed over the array area;
- and
- a second contact structure, disposed over the polysilicon stack.
Dependencies are inferred from the claim text.