Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, H. Jim Fulford, Charles E. May, Fred Hause, Dim-Lee Kwong
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Abstract
Semiconductor devices having a metal gate electrode and a titanium or tantalum nitride gate dielectric barrier layer and processes for fabricating such devices are provided. The use of a metal gate electrode along with a titanium or tantalum nitride gate dielectric barrier layer can, for example, provide a highly reliable semiconductor device having an increased operating speed as compared to conventional transistors.
Claims20
A semiconductor fabrication process, comprising:
- forming a gate dielectric layer over a substrate;
- forming a titanium or tantalum nitride barrier layer over the gate dielectric layer;
- forming a metal gate electrode over the titanium or tantalum nitride barrier layer;
- and
- forming nitrogen bearing spacers adjacent sidewalls of the metal gate electrode.
A semiconductor fabrication process, comprising:
- forming a gate dielectric layer over a substrate;
- forming a titanium or tantalum nitride barrier layer over the gate dielectric layer;
- forming a tungsten gate electrode over the nitride barrier layer;
- forming nitrogen-bearing spacers adjacent sidewalls of the tungsten gate electrode, the nitrogen-bearing spacers and nitride barrier layer sealing the gate dielectric layer against the substrate;
- implanting dopant into regions of the substrate adjacent the gate electrode;
- heating the substrate to activate the dopant, wherein the nitride barrier layer prevents interaction between the gate oxide layer and the tungsten gate electrode.
A semiconductor fabrication process, comprising:
- forming a titanium or tantalum layer over a substrate;
- using the titanium or tantalum layer to form a titanium or tantalum gate oxide layer over the substrate and to form a titanium or tantalum nitride barrier layer over the titanium or tantalum gate oxide layer;
- and
- forming a metal gate electrode over the titanium or tantalum nitride barrier layer.
Dependencies are inferred from the claim text.