Semiconductor devices

A semiconductor device comprising:

• an active region on a substrate;
• gate structures on the substrate, the gate structures spaced apart from each other in a first direction parallel to an upper surface of the substrate, each of the gate structures partially overlapping the active region in a vertical direction perpendicular to the upper surface of the substrate;
• first, second and third impurity layers each in an upper portion of the active region and adjacent to a gate structure of the gate structures;
• first contact plugs on the first and second impurity layers, respectively, each extending in the vertical direction;
• a third contact plug on the third impurity layer and extending in the vertical direction;
• second conductive structures in contact with upper surfaces of the first contact plugs, respectively, each of the second conductive structures extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, wherein the second conductive structures are wider than the first contact plugs, and wherein the second conductive structures extend beyond respective edges of the first contact plugs in the second direction;
• a third conductive structure in contact with an upper surface of the third contact plug and extending in the second direction;
• and
• a fifth contact plug in contact with an upper surface of the third conductive structure,
• wherein a height of the third conductive structure is greater than a height of each of the second conductive structures, wherein a width of the third conductive structure is greater than a width of each of the second conductive structures, wherein a width of the fifth contact plug is less than a width of the third conductive structure, and wherein widths of the second and third conductive structures are greater than widths of the first and third contact plugs, respectively,
• wherein the third contact plug extends between the first contact plugs and has a width greater than that of each of the first contact plugs, and
• wherein, in a plan view, the fifth contact plug is between the second conductive structures.

A semiconductor device comprising:

• first and second gate structures on a substrate and spaced apart from each other in a first direction;
• first, second, and third source/drain layers at respective upper portions of the substrate, the first gate structure between the first and second source/drain layers, and the second gate structure between the second and third source/drain layers in the first direction;
• first contact plugs on the first and third source/drain layers, respectively, the first contact plugs each extending in a vertical direction perpendicular to an upper surface of the substrate;
• second conductive structures respectively in contact with upper surfaces of the first contact plugs;
• a third contact plug on the second source/drain layer and extending in the vertical direction;
• a third conductive structure in contact with an upper surface of the third contact plug;
• and
• a fifth contact plug in contact with an upper surface of the third conductive structure,
• wherein a height of the third conductive structure is greater than a height of each of the second conductive structures, a width of the third conductive structure is greater than a width of each of the second conductive structures, a width of the fifth contact plug is less than a width of the third conductive structure, and a widest portion of each of the second conductive structures is greater than a widest portion of each of the first contact plugs, and
• wherein a thickness in the vertical direction of the fifth contact plug is less than a thickness in the vertical direction of the third contact plug, is less than a thickness in the vertical direction of each of the first contact plugs, and is greater than a thickness in the vertical direction of the third conductive structure.