H10D 64/60
Electrodes characterised by their materials
H10D64/60 (Electrodes characterised by their materials) appears on 24,706 US grants and 27,328 published applications in this corpus.
Search patents in H10D- Granted patents
- 24,706
- Published applications
- 27,328
- Assignees
- 2,127
- Inventors
- 24,872
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 34 | 0 |
| 1977 | 31 | 0 |
| 1978 | 26 | 0 |
| 1979 | 25 | 0 |
| 1980 | 34 | 0 |
| 1981 | 35 | 0 |
| 1982 | 37 | 0 |
| 1983 | 30 | 0 |
| 1984 | 22 | 0 |
| 1985 | 40 | 0 |
| 1986 | 48 | 0 |
| 1987 | 53 | 0 |
| 1988 | 66 | 0 |
| 1989 | 82 | 0 |
| 1990 | 71 | 0 |
| 1991 | 90 | 0 |
| 1992 | 87 | 0 |
| 1993 | 80 | 0 |
| 1994 | 108 | 0 |
| 1995 | 116 | 0 |
| 1996 | 99 | 0 |
| 1997 | 131 | 0 |
| 1998 | 193 | 0 |
| 1999 | 267 | 0 |
| 2000 | 300 | 0 |
| 2001 | 392 | 144 |
| 2002 | 358 | 455 |
| 2003 | 434 | 474 |
| 2004 | 470 | 590 |
| 2005 | 422 | 745 |
| 2006 | 490 | 781 |
| 2007 | 385 | 686 |
| 2008 | 399 | 793 |
| 2009 | 474 | 759 |
| 2010 | 649 | 771 |
| 2011 | 666 | 791 |
| 2012 | 620 | 911 |
| 2013 | 817 | 1064 |
| 2014 | 1079 | 1215 |
| 2015 | 1255 | 1675 |
| 2016 | 1633 | 1718 |
| 2017 | 1630 | 1574 |
| 2018 | 1459 | 1417 |
| 2019 | 1511 | 1519 |
| 2020 | 1469 | 1657 |
| 2021 | 1200 | 1350 |
| 2022 | 1156 | 1429 |
| 2023 | 1011 | 1381 |
| 2024 | 1084 | 1313 |
| 2025 | 1021 | 1259 |
| 2026 | 517 | 857 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator18,069
- H10D 64/62Electrodes ohmically coupled to a semiconductor6,253
- H10D 64/64Electrodes comprising a schottky barrier to a semiconductor1,770
- H10D 64/602Heterojunction gate electrodes for fets317
- H10D 64/605Source, drain, or gate electrodes for fets comprising highly resistive materials173
- H10D 64/608Being superconducting48
Recent patents
- Highly integrated semiconductor device6 Oct 2026US 12,757,404 B2Samsung Electronics Co., Ltd.
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Thin film transistor having an etching protection film and manufacturing method thereof3,930US 7,385,224 B2Casio Computer Co., Ltd. · 2008