H10D 64/64
Electrodes comprising a schottky barrier to a semiconductor
Official title: Electrodes comprising a Schottky barrier to a semiconductor
H10D64/64 (Electrodes comprising a schottky barrier to a semiconductor) appears on 1,770 US grants and 1,898 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,770
- Published applications
- 1,898
- Assignees
- 553
- Inventors
- 3,100
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 8 | 0 |
| 1978 | 10 | 0 |
| 1979 | 8 | 0 |
| 1980 | 13 | 0 |
| 1981 | 6 | 0 |
| 1982 | 11 | 0 |
| 1983 | 8 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 12 | 0 |
| 1987 | 13 | 0 |
| 1988 | 11 | 0 |
| 1989 | 18 | 0 |
| 1990 | 15 | 0 |
| 1991 | 17 | 0 |
| 1992 | 18 | 0 |
| 1993 | 14 | 0 |
| 1994 | 10 | 0 |
| 1995 | 13 | 0 |
| 1996 | 9 | 0 |
| 1997 | 12 | 0 |
| 1998 | 16 | 0 |
| 1999 | 10 | 0 |
| 2000 | 7 | 0 |
| 2001 | 12 | 5 |
| 2002 | 15 | 15 |
| 2003 | 12 | 23 |
| 2004 | 24 | 27 |
| 2005 | 13 | 40 |
| 2006 | 22 | 34 |
| 2007 | 20 | 52 |
| 2008 | 17 | 57 |
| 2009 | 33 | 57 |
| 2010 | 44 | 54 |
| 2011 | 55 | 89 |
| 2012 | 43 | 67 |
| 2013 | 67 | 91 |
| 2014 | 87 | 97 |
| 2015 | 95 | 128 |
| 2016 | 129 | 110 |
| 2017 | 112 | 100 |
| 2018 | 88 | 99 |
| 2019 | 83 | 81 |
| 2020 | 89 | 106 |
| 2021 | 70 | 96 |
| 2022 | 90 | 108 |
| 2023 | 74 | 112 |
| 2024 | 75 | 95 |
| 2025 | 73 | 101 |
| 2026 | 48 | 54 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Semiconductor device8 Sep 2026US 12,733,189 B2Rohm Co., Ltd.
- Schottky barrier diode (SBD) leakage current blocking structure25 Aug 2026US 12,720,780 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage semiconductor device having Schottky barrier diode25 Aug 2026US 12,720,850 B2SK keyfoundry Inc.
- Semiconductor device24 Sep 2026US 2026/0293243 A1Vanguard International Semiconductor Corporation
- Nitride-based semiconductor device and method for manufacturing the same10 Sep 2026US 2026/0271324 A1Innoscience (Suzhou) Semiconductor Co., Ltd.
- Multi-channel high electron mobility transistor with reduced input capacitance13 Aug 2026US 2026/0239697 A1Infineon Technologies Austria AG
- Semiconductor device6 Aug 2026US 2026/0231480 A1Rohm Co., Ltd.
- Diode, rectifier circuit using same, and power-receiving rectenna6 Aug 2026US 2026/0231501 A1Nichia Corporation
Most cited
By later US patents
- Deposition on a nanowire using atomic layer deposition350US 8,900,935 B2International Business Machines Corporation · 2014
- Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps233US 5,391,510 AInternational Business Machines Corporation · 1995
- Thin film field effect transistor and method of making same228US 4,769,338 AEnergy Conversion Devices, Inc. · 1988
- Thin film field effect transistor and method of making same186US 4,843,443 AEnergy Conversion Devices, Inc. · 1989
- Thin film field effect transistor166US 4,670,763 AEnergy Conversion Devices, Inc. · 1987