H10D 64/649
Schottky drain or source electrodes for fets having rectifying junction gate electrodes
Official title: {Schottky drain or source electrodes for FETs having rectifying junction gate electrodes}
H10D64/649 (Schottky drain or source electrodes for fets having rectifying junction gate electrodes) appears on 40 US grants and 41 published applications in this corpus.
Search patents in H10D- Granted patents
- 40
- Published applications
- 41
- Assignees
- 22
- Inventors
- 54
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 0 | 4 |
| 2006 | 1 | 1 |
| 2007 | 2 | 1 |
| 2008 | 1 | 0 |
| 2009 | 1 | 1 |
| 2010 | 1 | 1 |
| 2011 | 2 | 3 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 3 | 4 |
| 2017 | 1 | 1 |
| 2018 | 2 | 4 |
| 2019 | 2 | 1 |
| 2020 | 1 | 5 |
| 2021 | 5 | 1 |
| 2022 | 3 | 2 |
| 2023 | 1 | 4 |
| 2024 | 1 | 2 |
| 2025 | 0 | 0 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide semiconductor device30 Jun 2026US 12,672,329 B2Hitachi, Ltd.
- Field effect transistor with p-FET type behaviour10 Feb 2026US 12,550,399 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for preparing semiconductor device with contact structure19 Mar 2024US 11,935,834 B2Nanya Technology Corporation
- Semiconductor device with contact structure and method for preparing the same5 Sep 2023US 11,749,730 B2Nanya Technology Corporation
- SiC MOSFET with built-in Schottky diode18 Oct 2022US 11,476,369 B2Semiconductor Components Industries, LLC
- Normally off jfet11 Jun 2026US 2026/0164727 A1Microchip Technology Incorporated
- Silicon carbide semiconductor device16 May 2024US 2024/0162297 A1Hitachi, Ltd.
- Field effect transistor with p-fet type behaviour16 May 2024US 2024/0162299 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for preparing semiconductor device with contact structure26 Oct 2023US 2023/0343841 A1Nanya Technology Corporation
- Sic mosfet with built-in schottky diode23 Feb 2023US 2023/0055024 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Stable PD-SOI devices and methods65US 6,828,632 B2Micron Technology, Inc. · 2004
- Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions50US 7,084,423 B2Acorn Technologies, Inc. · 2006
- Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions24US 7,884,003 B2Acorn Technologies, Inc. · 2011
- Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions22US 7,462,860 B2Acorn Technologies, Inc. · 2008
- Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions21US 9,209,261 B2Acorn Technologies, Inc. · 2015