Field effect transistor with p-FET type behaviour
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJulien Buckley, René Escoffier, Cyrille Le Royer, Blend Mohamad
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Abstract
A field effect transistor includes a substrate; an electron channel layer disposed on the substrate; a barrier layer disposed on the electron channel layer; a hole channel layer disposed on the barrier layer; a p-type doped semiconductor material layer disposed on the hole channel layer; a source electrode including a first portion in ohmic contact with the electron channel layer and a second portion in ohmic contact with the p-type doped semiconductor material layer; a drain electrode in ohmic contact with the electron channel layer; and a gate electrode disposed facing the p-type doped semiconductor material layer, between the source and drain electrodes.
Claims15
A field effect transistor comprising:
- a substrate;
- an electron channel layer disposed on the substrate;
- a barrier layer disposed on the electron channel layer;
- a hole channel layer disposed on the barrier layer;
- a p-type doped semiconductor material layer disposed on the hole channel layer;
- a source electrode comprising a first portion in ohmic contact with the electron channel layer and a second portion in ohmic contact with the p-type doped semiconductor material layer;
- a drain electrode in ohmic contact with the electron channel layer, and
- a gate electrode disposed facing the p-type doped semiconductor material layer, between the source and drain electrodes.
Dependencies are inferred from the claim text.