Normally off jfet

A junction field-effect transistor that is normally off rather than normally on, the junction field-effect transistor comprising:

• a volume of semiconductor material including a first end, a second end, a first side, and a second side;
• a first gate located at the first side of the volume of semiconductor material;
• a second gate located at the second side of the volume of semiconductor material, wherein the second gate is opposite and spaced apart from the first gate;
• a Schottky barrier diode located at the first end of the volume of semiconductor material between the first gate and the second gate, wherein the Schottky barrier diode provides an only entrance for a plurality of majority charge carriers;
• and
• a drain spaced apart from the Schottky barrier diode and located at one of the ends of the volume of semiconductor material, wherein the drain provides an exit for the plurality of majority charge carriers, and wherein a region of the volume of semiconductor material between the Schottky barrier diode and the drain provides a channel through which the plurality of majority charge carriers move.

A method of making a junction field-effect transistor that is normally off rather than normally on, the method comprising:

• providing a substrate which will be the drain;
• growing a semiconductor material on the substrate, wherein the semiconductor material will provide a channel;
• implanting first and second lower gate components into respective first and second sides of the semiconductor material;
• implanting first and second upper gate components into respective first and second sides of the semiconductor material, wherein the first upper gate component is more highly doped than the first lower gate component, and the second upper gate component is more highly doped than the second lower gate component;
• depositing a Schottky metal on the semiconductor material at a first end of the channel opposite the drain and generally between and spaced apart from the upper components of the first and second gates;
• and
• providing a first electrical terminal on the Schottky metal, a second electrical terminal on the upper component of the first gate, a third electrical terminal on the upper component of the second gate, and a fourth electrical terminal on the drain for facilitating connections to appropriate voltage sources.