Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a principal surface;
• a semiconductor layer formed on the principal surface of the semiconductor substrate, the semiconductor layer including a first-conductivity-type low concentration layer in contact with the principal surface of the semiconductor substrate and a first-conductivity-type high concentration layer that is formed at a surface layer portion of a surface, which is on a side opposite to the principal surface, of the semiconductor layer and that has a higher impurity concentration than the low concentration layer;
• a Schottky electrode that is formed on a surface of the semiconductor layer and that forms a Schottky junction portion between the high concentration layer and the Schottky electrode;
• and
• a second-conductivity-type annular guard region formed at the surface layer portion of the semiconductor layer,
• wherein the high concentration layer is formed in an active region surrounded by the guard region such that the high concentration layer is in contact with the whole area of an inward end portion of the guard region in a plan view, and
• the high concentration layer is in contact with the low concentration layer.