US 2026/0231501 A1Published application

Diode, rectifier circuit using same, and power-receiving rectenna

AssigneeNichia Corporation

InventorsYuji OMAKI, Shusuke KAKIZAWA

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Abstract

A diode includes a substrate, a first semiconductor layer provided on the substrate and containing a first impurity at a first concentration, a second semiconductor layer provided on the first semiconductor layer and containing a second impurity at a concentration lower than the first concentration, a first electrode provided on the first semiconductor layer and surrounding at least a part of the second semiconductor layer, and a second electrode provided on the second semiconductor layer. A width of the first electrode is in a range from one to six times a propagation length Lt [m] defined by Equation (1): Lt=(ρC [Ω·m2]/RS [Ω/sq])1/2 (1) where ρC is a contact resistivity between the first semiconductor layer and the first electrode, and RS is a sheet resistance of the first semiconductor layer.

Claims12

Dependent claims

A diode comprising:

a substrate;
a first semiconductor layer provided on the substrate, the first semiconductor containing a first impurity at a first concentration;
a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer containing a second impurity at a concentration lower than the first concentration;
a first electrode provided on the first semiconductor layer, the first electrode surrounding at least a part of the second semiconductor layer;
and
a second electrode provided on the second semiconductor layer,
wherein a width of the first electrode is in a range from one time to six times a propagation length Lt [m] as defined by Equation (1) set forth below:
L
t
[
m
]
=
(
ρc
[
Ω
·
m
2
]
/
Rs
[
Ω
/
sq
]
)
1
/
2
(
1
)
where ρC is a contact resistivity between the first semiconductor layer and the first electrode, and RS is a sheet resistance of the first semiconductor layer.

33 more elements

Dependencies are inferred from the claim text.