Semiconductor device
AssigneeVanguard International Semiconductor Corporation
InventorsShyh-Chiang SHEN, Wei-Chih CHENG, Po-Heng LIN
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a buffer layer, a channel layer, a barrier layer, a gate structure, a first N-type cap layer and a gate electrode layer. The buffer layer is located on the substrate. The channel layer is located on the buffer layer. The barrier layer is located on the channel layer. The gate structure is located on the barrier layer. The first N-type cap layer is located on the channel layer. The first N-type cap layer is lightly doped. The gate electrode layer is located on the first N-type cap layer.
Claims18
A semiconductor device, comprising:
- a substrate;
- a buffer layer located on the substrate;
- a channel layer located on the buffer layer;
- a barrier layer located on the channel layer;
- a gate structure located on the barrier layer;
- and
- a first N-type capping layer located on the channel layer, wherein the first N-type capping layer is lightly doped;
- and
- a gate electrode layer located on the first N-type capping layer.
Dependencies are inferred from the claim text.