H10D 64/647
Schottky drain or source electrodes for igfets
Official title: {Schottky drain or source electrodes for IGFETs}
H10D64/647 (Schottky drain or source electrodes for igfets) appears on 377 US grants and 424 published applications in this corpus.
Search patents in H10D- Granted patents
- 377
- Published applications
- 424
- Assignees
- 190
- Inventors
- 737
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 5 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 4 | 4 |
| 2003 | 3 | 10 |
| 2004 | 14 | 15 |
| 2005 | 5 | 18 |
| 2006 | 7 | 13 |
| 2007 | 10 | 26 |
| 2008 | 7 | 16 |
| 2009 | 11 | 13 |
| 2010 | 14 | 22 |
| 2011 | 19 | 25 |
| 2012 | 11 | 23 |
| 2013 | 12 | 19 |
| 2014 | 23 | 19 |
| 2015 | 16 | 18 |
| 2016 | 26 | 19 |
| 2017 | 22 | 14 |
| 2018 | 18 | 31 |
| 2019 | 22 | 11 |
| 2020 | 13 | 15 |
| 2021 | 10 | 9 |
| 2022 | 11 | 20 |
| 2023 | 14 | 22 |
| 2024 | 16 | 12 |
| 2025 | 10 | 17 |
| 2026 | 8 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neuromorphic device having three-dimensional stacked structure and method of fabricating the same18 Aug 2026US 12,711,365 B2Korea Advanced Institute of Science and Technology (KAIST)
- Power module including a semiconductor device with parasitic diode4 Aug 2026US 12,701,770 B2Hon Young Semiconductor Corporation
- Semiconductor device and method for manufacturing the same23 Jun 2026US 12,666,671 B2Kabushiki Kaisha Toshiba
- Semiconductor device with conductive members having schottky contact26 May 2026US 12,641,859 B2Kabushiki Kaisha Toshiba
- Semiconductor devices with Schottky barriers31 Mar 2026US 12,593,491 B2Skyworks Solution, Inc.
- Germanium-rich metal contact layers for pmos source and drain contacts2 Jul 2026US 2026/0190430 A1Intel Corporation
- Semiconductor device28 May 2026US 2026/0150353 A1Kabushiki Kaisha Toshiba
- Diode device28 May 2026US 2026/0150388 A1Kabushiki Kaisha Toshiba
- Semiconductor device23 Apr 2026US 2026/0113974 A1Kabushiki Kaisha Toshiba
- Semiconductor device with reverse current protection2 Apr 2026US 2026/0096159 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Deposition on a nanowire using atomic layer deposition350US 8,900,935 B2International Business Machines Corporation · 2014
- Thin film field effect transistor and method of making same228US 4,769,338 AEnergy Conversion Devices, Inc. · 1988
- Thin film field effect transistor and method of making same186US 4,843,443 AEnergy Conversion Devices, Inc. · 1989
- Thin film field effect transistor166US 4,670,763 AEnergy Conversion Devices, Inc. · 1987
- Integrated circuit compatible thin film field effect transistor and method of making same166US 4,673,957 AEnergy Conversion Devices, Inc. · 1987