Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode including a first electrode portion and a second electrode portion, a direction from the first electrode to the first electrode portion being along a first direction, the second electrode portion being electrically connected to the first electrode portion;
• a third electrode;
• a semiconductor member including a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, the first partial region being between the first electrode and the third electrode in the first direction, the second partial region being between the first electrode and the second electrode portion in the first direction, the third partial region being between at least a part of the second electrode portion and the third electrode in a second direction crossing the first direction, the first semiconductor region including at least one of a fourth partial region or a fifth partial region, at least a part of the fourth partial region being between the third electrode and the first electrode portion in the first direction, at least a part of the fifth partial region being between the second electrode portion and the first electrode portion in the first direction;
• and
• a first insulating member provided between the third electrode and the semiconductor member.