Integrated circuit compatible thin film field effect transistor and method of making same
AssigneeEnergy Conversion Devices, Inc.
InventorsStanford R. Ovshinsky, Stephen J. Hudgens
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Abstract
There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a silicon-germanium alloy body having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors are rectifying contacts formed on or in the body. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.
Claims32
An integrated circuit compatible thin film field effect transistor comprising:
- a silicon-germanium alloy body, said body having a structure more ordered than amorphous silicon-germanium semiconductor material and less ordered than single crystalline semiconductor material;
- source and drain electrodes of amorphous semiconductor material forming rectifying contacts with said body;
- and
- a gate electrode adjacent to and insulated from said body.
An improved system for selectively addressing each element of an array of elements, said system including:
- a first set of address lines;
- a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith;
- each said crossover point being associated with a given one of said elements to be addressed;
- an isolation device associated with each said element to be addressed;
- and
- addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one integrated circuit compatible thin film field effect transistor, said transistor comprising a silicon-germanium alloy body, said body having a structure more ordered than amorphous silicon-germanium semiconductor material and less ordered than single crystalline semiconductor material, source and drain electrodes formed by amorphous semiconductor material providing rectifying contacts with said body, and a gate electrode adjacent to and insulated from said body.
Dependencies are inferred from the claim text.