Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode to the second electrode being along a first direction;
• a third electrode;
• a first conductive member electrically connected to the second electrode, a second direction from the third electrode to at least a part of the first conductive member crossing the first direction, the first conductive member extending along a third direction crossing a plane including the first direction and the second direction, the first conductive member including a first conductive portion and a second conductive portion, a direction from the first conductive portion to the second conductive portion being along the third direction, the second conductive portion including a first portion, and a first distance along the first direction between the first electrode and the first conductive portion being shorter than a second distance along the first direction between the first electrode and the first portion;
• a semiconductor member provided between the first electrode and the second electrode, the semiconductor member including a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type, the first semiconductor layer including a first partial region and a second partial region, the first partial region being between the first electrode and the third electrode in the first direction, the second partial region being between the first electrode and the first conductive member in the first direction, the second partial region being in contact with the first conductive portion, at least a part of the second semiconductor layer being between the third electrode and the first conductive portion in the second direction, the second semiconductor layer being not provided between the third electrode and the second conductive portion in the second direction, a second impurity concentration of the first conductivity type in the second semiconductor layer being higher than a first impurity concentration of the first conductivity type in the first semiconductor layer;
• and
• a first insulating member provided between the third electrode and the semiconductor member.