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US 12,593,491 B2Granted
Semiconductor devices with Schottky barriers
AssigneeSkyworks Solution, Inc.
InventorsYun Shi, John Tzung-Yin Lee
Life of this patent
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Abstract
Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.
Claims20
A method of fabricating a transistor, the method comprising:
- forming a p-well or an n-well on an insulator layer;
- forming a gate for the transistor, the transistor comprising a Silicon-on-Insulator (SOI) device;
- doping a first region within the p-well or the n-well with a concentration that is below a threshold to form a source for the transistor;
- doping a second region within the p-well or the n-well with the concentration to form a drain for the transistor, at least a portion of the gate being disposed directly in-line with and between the first region and the second region;
- and
- forming a first contact on the first region and a second contact on the second region.
3 more elements
A radio-frequency switch comprising:
- an input node;
- an output node;
- and
- a transistor connected between the input node and the output node, the transistor being configured to control passage of a radio-frequency signal from the input node to the output node, the transistor including a p-well or an n-well, a first region within the p-well or the n-well, a second region within the p-well or the n-well, a first contact disposed on the first region, and a second contact disposed on the second region, the first region and the second region being doped with a concentration below a threshold, the transistor is implemented as a Silicon-on-Insulator (SOI) device, the first region extending beyond a surface of the p-well or the n-well.
1 more element
A transistor comprising:
- a substrate;
- an insulator layer formed on the substrate;
- a p-well or an n-well formed on the insulator layer;
- a first region in the p-well or the n-well that is doped with a concentration below a threshold, the first region forming an exposed surface along the p-well or n-well;
- a second region in the p-well or the n-well that is doped with the concentration;
- a first contact disposed on the first region;
- and
- a second contact disposed on the second region.
5 more elements
Dependencies are inferred from the claim text.