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US 8,900,935 B2Granted
Deposition on a nanowire using atomic layer deposition
AssigneeInternational Business Machines Corporation
InventorsDechao Guo, Zhengwen Li, Kejia Wang, Zhen Zhang, Yu Zhu
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Abstract
In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.
Claims20
A method comprising:
- providing a semiconductor device comprising a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overlie the substrate;
- and
- performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film comprises performing atomic layer deposition to deposit the film on at least a surface of the nanowire;
- where the first structure, the second structure and the nanowire comprise parts of a first semiconductor device, where the layer comprises a first layer, where the nanowire comprises a first nanowire, the method further comprising:
- providing on the substrate a second semiconductor device comprised of a second nanowire, a third structure and a fourth structure, where the second nanowire is suspended between the third structure and the fourth structure;
- masking the second semiconductor device when performing the atomic layer deposition to deposit the first film at least on a surface of the first nanowire, where the first film is doped with a first dopant;
- masking the first semiconductor device when performing a second atomic layer deposition to deposit a second film at least on a surface of the second nanowire, where the second film is doped with a second dopant that is different from the first dopant;
- performing at least one heat treatment on the first semiconductor device and the second semiconductor device to form a first layer, from the first film, on the first nanowire and to form a second layer, from the second film, on the second nanowire;
- and
- removing any unreacted portions of the first film and the second film.
7 more elements
A method comprising:
- providing a semiconductor device comprising a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overlie the substrate;
- and
- performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film comprises performing atomic layer deposition to deposit the film on at least a surface of the nanowire;
- where the first structure, the second structure and the nanowire comprise parts of a first semiconductor device, where the film comprises a first film, where the nanowire comprises a first nanowire, the method further comprising:
- providing on the substrate a second semiconductor device comprised of a second nanowire, a third structure and a fourth structure, where the second nanowire is suspended between the third structure and the fourth structure, where performing the atomic layer deposition to deposit the first film at least on a surface of the first nanowire further comprises performing the atomic layer deposition to deposit the first film at least on a surface of the second nanowire;
- performing a first heat treatment on the first semiconductor device and the second semiconductor device to form a first layer on at least a portion of the first nanowire and a second layer on at least a portion of the second nanowire;
- removing any unreacted material of the first film;
- masking the second semiconductor device while performing an ion implantation to dope at least the first layer of the first semiconductor device with a first dopant;
- thereafter, performing a second heat treatment on at least the first semiconductor device to diffuse the first dopant;
- masking the first semiconductor device while performing an ion implantation to dope at least the second layer of the second semiconductor device with a second dopant that is different from the first dopant;
- and
- thereafter, performing a third heat treatment on at least the second semiconductor device to diffuse the second dopant.
9 more elements
Dependencies are inferred from the claim text.