Thin film field effect transistor
AssigneeEnergy Conversion Devices, Inc.
InventorsStanford R. Ovshinsky, Stephen J. Hudgens
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Abstract
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Claims30
A thin film field effect transistor comprising:
- a body of semiconductor material, said body including at least silicon, said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material;
- a source and a drain of amorphous semiconductor alloy material formed on said body and forming rectifying contacts with said body of semiconductor material;
- and
- a gate electrode adjacent to and insulated from said body of semiconductor material.
A system for selectively addressing each element of an array of elements, said system comprising:
- a first set of address lines;
- a second set of address lines spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points therewith;
- each said crossover point being associated with a given one of said elements to be addressed;
- and
- addressing circuitry coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines, said addressing circuitry including at least one thin film field effect transistor comprising a body of semiconductor material, said body including at least silicon with said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material, a source and a drain of amorphous semiconductor alloy material formed as rectifying contacts on said body of semiconductor material, and a gate electrode adjacent to and insulated from said body of semiconductor material.
Dependencies are inferred from the claim text.