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US 12,720,780 B2Granted
Schottky barrier diode (SBD) leakage current blocking structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Wu, Chien-Lin Tseng, Sheng Yu Lin, Ting-Chang Chang, Yung-Fang Tan, Yu-Fa Tu, Wei-Chun Hung
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Abstract
Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.
Claims20
A method comprising:
- forming a first well of a first conductivity type in a second well of a second conductivity type, the first well contacting a sidewall of a shallow trench isolation (STI) structure;
- after forming the first well, depositing a protection structure overlapping the first well and an upper surface of the STI structure;
- and
- after depositing the protection structure, forming a first silicide over the first well and the second well, the first silicide corresponding to a first contact of a Schottky barrier diode (SBD), the first silicide separated from the STI structure by the protection structure.
1 more element
A method comprising:
- forming a first well of a first conductivity type in a substrate;
- forming a shallow trench isolation (STI) in the first well;
- forming a second well and a third well of a second conductivity type in the first well, the second well contacting a sidewall of the STI;
- after forming the first well, the STI, the second well, and the third well, depositing a protection structure overlapping an upper surface of the second well and an upper surface of the STI;
- and
- after depositing the protection structure, forming a first silicide over the first well and the third well, the first silicide corresponding to a first contact of a Schottky barrier diode (SBD), the first silicide separated from the STI by the protection structure.
3 more elements
A method comprising:
- forming a deep well of a first conductivity type;
- forming a first shallow trench isolation (STI) region and a second STI region, wherein the deep well extends between the first STI region and the second STI region;
- forming a first well of a second conductivity type in the deep well, the first well contacting the first STI region;
- forming a second well of the second conductivity type in the deep well, the second well being parallel to the first well;
- forming a third well of the first conductivity type in the deep well, the third well being between the first STI region and the second STI region, the third well having a higher concentration of impurities of the first conductivity type than the deep well;
- forming a first high-dosage well at an upper surface of the first well;
- forming a second high-dosage well at an upper surface of the second well, the second high-dosage well having a higher concentration of impurities of the second conductivity type than the third well;
- and
- forming a silicide disposed over the deep well and over the second high-dosage well.
6 more elements
Dependencies are inferred from the claim text.