H10D 64/62
Electrodes ohmically coupled to a semiconductor
H10D64/62 (Electrodes ohmically coupled to a semiconductor) appears on 6,253 US grants and 6,962 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,253
- Published applications
- 6,962
- Assignees
- 1,021
- Inventors
- 9,518
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 6 | 0 |
| 1978 | 6 | 0 |
| 1979 | 5 | 0 |
| 1980 | 11 | 0 |
| 1981 | 10 | 0 |
| 1982 | 13 | 0 |
| 1983 | 9 | 0 |
| 1984 | 8 | 0 |
| 1985 | 12 | 0 |
| 1986 | 16 | 0 |
| 1987 | 15 | 0 |
| 1988 | 21 | 0 |
| 1989 | 40 | 0 |
| 1990 | 25 | 0 |
| 1991 | 42 | 0 |
| 1992 | 37 | 0 |
| 1993 | 26 | 0 |
| 1994 | 42 | 0 |
| 1995 | 37 | 0 |
| 1996 | 31 | 0 |
| 1997 | 42 | 0 |
| 1998 | 59 | 0 |
| 1999 | 53 | 0 |
| 2000 | 38 | 0 |
| 2001 | 66 | 20 |
| 2002 | 31 | 49 |
| 2003 | 48 | 53 |
| 2004 | 42 | 64 |
| 2005 | 52 | 97 |
| 2006 | 62 | 92 |
| 2007 | 41 | 91 |
| 2008 | 49 | 118 |
| 2009 | 74 | 140 |
| 2010 | 119 | 197 |
| 2011 | 146 | 223 |
| 2012 | 154 | 255 |
| 2013 | 224 | 317 |
| 2014 | 308 | 346 |
| 2015 | 364 | 516 |
| 2016 | 478 | 551 |
| 2017 | 513 | 487 |
| 2018 | 445 | 399 |
| 2019 | 423 | 388 |
| 2020 | 366 | 425 |
| 2021 | 312 | 350 |
| 2022 | 331 | 424 |
| 2023 | 260 | 370 |
| 2024 | 283 | 385 |
| 2025 | 296 | 363 |
| 2026 | 152 | 242 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Semiconductor device including two-dimensional material and method of manufacturing the same29 Sep 2026US 12,751,046 B2Samsung Electronics Co., Ltd.
- Silicon carbide semiconductor device and power conversion apparatus29 Sep 2026US 12,751,068 B2Mitsubishi Electric Corporation
- Realtime wireless synchronization of live event audio stream with a video recording8 Oct 2026US 2026/0314022 A1Bygge Technologies Inc.
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Source/drain contacts connecting 2-d material layer and method for forming the same8 Oct 2026US 2026/0314276 A1National Yang Ming.Chiao Tung University
- Seal ring structure8 Oct 2026US 2026/0314416 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar junction transistor co-integrated with nanosheet transistor1 Oct 2026US 2026/0304807 A1International Business Machines Corporation
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Thin film transistor having an etching protection film and manufacturing method thereof3,930US 7,385,224 B2Casio Computer Co., Ltd. · 2008