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US 12,751,068 B2Granted
Silicon carbide semiconductor device and power conversion apparatus
AssigneeMitsubishi Electric Corporation
InventorsMotoru Yoshida, Katsutoshi Sugawara, Yoshitaka Kimura, Yutaka Fukui, Tetsuo Takahashi
Life of this patent
Estimating the term…
Abstract
In a silicon carbide semiconductor device, in a plan view, a plurality of source contact holes is intermittently provided in a second direction along a trench gate, and a source electrode is provided on an insulating film and is electrically connected to a source layer via the plurality of source contact holes. Intermittent recesses reflecting the shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate.
Claims19
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity type that is provided between a first main surface and a second main surface of a semiconductor substrate;
- a base layer of a second conductivity type that is provided on a first main surface side of the drift layer;
- a source layer of the first conductivity type that is selectively provided on a first main surface side of the base layer;
- a trench gate that has a gate electrode provided via a gate insulating film on an inner surface of each of a plurality of trenches, the plurality of trenches being provided side by side in a first direction and extending in a second direction in a plan view, and in contact with the base layer and the source layer in a cross-sectional view;
- an insulating film that has a plurality of source contact holes intermittently provided in the second direction along the trench gate in the plan view, and is provided on the first main surface in a cross-sectional view;
- a source electrode that is provided on the insulating film and is electrically connected to the source layer via the plurality of source contact holes;
- a first metal film that is provided on the source electrode and contains nickel;
- and
- a second metal film that is provided on the first metal film and contains a metal having a lower ionization tendency than ionization tendency of the first metal film, wherein
- intermittent recesses reflecting shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate, and
- lengths of the plurality of source contact holes are longer than distances between the plurality of source contact holes in the second direction.
8 more elements
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity type that is provided between a first main surface and a second main surface of a semiconductor substrate;
- a base layer of a second conductivity type that is provided on a first main surface side of the drift layer;
- a source layer of the first conductivity type that is selectively provided on a first main surface side of the base layer;
- a trench gate that has a gate electrode provided via a gate insulating film on an inner surface of each of a plurality of trenches, the plurality of trenches being provided side by side in a first direction and extending in a second direction in a plan view, and in contact with the base layer and the source layer in a cross-sectional view;
- an insulating film that has a plurality of source contact holes intermittently provided in the second direction along the trench gate in the plan view, and is provided on the first main surface in a cross-sectional view;
- a source electrode that is provided on the insulating film and is electrically connected to the source layer via the plurality of source contact holes;
- a first metal film that is provided on the source electrode and contains nickel;
- and
- a second metal film that is provided on the first metal film and contains a metal having a lower ionization tendency than ionization tendency of the first metal film, wherein
- intermittent recesses reflecting shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate, and
- the plurality of source contact holes in the plan view is arranged side by side in the first direction and is arranged asymmetrically with respect to the second direction.
8 more elements
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity type that is provided between a first main surface and a second main surface of a semiconductor substrate;
- a base layer of a second conductivity type that is provided on a first main surface side of the drift layer;
- a source layer of the first conductivity type that is selectively provided on a first main surface side of the base layer;
- a trench gate that has a gate electrode provided via a gate insulating film on an inner surface of each of a plurality of trenches, the plurality of trenches being provided side by side in a first direction and extending in a second direction in a plan view, and in contact with the base layer and the source layer in a cross-sectional view;
- an insulating film that has a plurality of source contact holes intermittently provided in the second direction along the trench gate in the plan view, and is provided on the first main surface in a cross-sectional view;
- a source electrode that is provided on the insulating film and is electrically connected to the source layer via the plurality of source contact holes;
- a first metal film that is provided on the source electrode and contains nickel;
- and
- a second metal film that is provided on the first metal film and contains a metal having a lower ionization tendency than ionization tendency of the first metal film, wherein
- intermittent recesses reflecting shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate, and
- one or more first portions on the first main surface side of the base layer and a second portion on a first main surface side of the source layer are adjacent to each other and overlap one of the plurality of source contact holes in the plan view.
8 more elements
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity type that is provided between a first main surface and a second main surface of a semiconductor substrate;
- a base layer of a second conductivity type that is provided on a first main surface side of the drift layer;
- a source layer of the first conductivity type that is selectively provided on a first main surface side of the base layer;
- a trench gate that has a gate electrode provided via a gate insulating film on an inner surface of each of a plurality of trenches, the plurality of trenches being provided side by side in a first direction and extending in a second direction in a plan view, and in contact with the base layer and the source layer in a cross-sectional view;
- an insulating film that has a plurality of source contact holes intermittently provided in the second direction along the trench gate in the plan view, and is provided on the first main surface in a cross-sectional view;
- a source electrode that is provided on the insulating film and is electrically connected to the source layer via the plurality of source contact holes;
- a first metal film that is provided on the source electrode and contains nickel;
- and
- a second metal film that is provided on the first metal film and contains a metal having a lower ionization tendency than ionization tendency of the first metal film, wherein
- intermittent recesses reflecting shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate, and
- a side surface of the insulating film in contact with one of the plurality of source contact holes is inclined such that the one of the plurality of source contact holes spreads toward a side opposite to the semiconductor substrate in a cross-sectional view.
8 more elements
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity type that is provided between a first main surface and a second main surface of a semiconductor substrate;
- a base layer of a second conductivity type that is provided on a first main surface side of the drift layer;
- a source layer of the first conductivity type that is selectively provided on a first main surface side of the base layer;
- a trench gate that has a gate electrode provided via a gate insulating film on an inner surface of each of a plurality of trenches, the plurality of trenches being provided side by side in a first direction and extending in a second direction in a plan view, and in contact with the base layer and the source layer in a cross-sectional view;
- an insulating film that has a plurality of source contact holes intermittently provided in the second direction along the trench gate in the plan view, and is provided on the first main surface in a cross-sectional view;
- a source electrode that is provided on the insulating film and is electrically connected to the source layer via the plurality of source contact holes;
- a first metal film that is provided on the source electrode and contains nickel;
- and
- a second metal film that is provided on the first metal film and contains a metal having a lower ionization tendency than ionization tendency of the first metal film, wherein
- intermittent recesses reflecting shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate, and
- a curved surface is provided between a side surface of the insulating film in contact with one of the plurality of source contact holes and a surface of the insulating film on a side opposite to the semiconductor substrate in a cross-sectional view.
8 more elements
Dependencies are inferred from the claim text.