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US 2026/0304807 A1Published application
Bipolar junction transistor co-integrated with nanosheet transistor
AssigneeInternational Business Machines Corporation
InventorsAnthony I-Chih Chou, Robert Gauthier, Reinaldo Vega, Christopher D. Sheraw, Jun Liu, Keisuke Motoki, Mahender Kumar, Anton Tokranov, Pial Mirdha
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Abstract
A semiconductor device includes a vertical bipolar junction device, having a collector, a base over the collector, an emitter over the base, one or more source/drain region/dummy and dummy gate alternatively and laterally extended over the emitter, and a contact over source/drain regions of the one or more source/drain region/dummy gate.
Claims20
A semiconductor device, comprising:
- a vertical bipolar junction device, comprising:
- a collector;
- a base over the collector;
- an emitter over the base;
- one or more source/drain region and dummy gate alternatively and laterally extended over the emitter;
- and
- a contact over source/drain regions of the one or more source/drain region and dummy gate.
4 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a vertical bipolar junction device, comprising:
- forming a collector;
- forming a base over the collector;
- forming an emitter over the base;
- forming one or more source/drain region and dummy gate alternatively and laterally extended over the emitter;
- and
- forming a contact over source/drain regions of the one or more source/drain region and dummy gate.
4 more elements
A semiconductor device, comprising:
- a vertical bipolar junction device, comprising:
- a collector;
- a base over the collector;
- and
- an emitter over the base, wherein:
- the emitter, the base and the collector are doped with an N-type dopant or a P-type dopant;
- and
- a concentration of a dopant of the emitter is higher than a concentration of a dopant of the collector and a concentration of a dopant of the base.
5 more elements
Dependencies are inferred from the claim text.