Thin film transistor having an etching protection film and manufacturing method thereof

A thin film transistor comprising:

• a semiconductor thin film including a source region, a drain region and a channel region;
• a gate insulating film formed on one surface of the semiconductor thin film;
• a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween;
• an ohmic contact layer formed on each of the source region and the drain region of the semiconductor thin film;
• and
• an insulating film formed on the channel region of the semiconductor thin film corresponding to the gate electrode,
• wherein a width of the channel region is larger than a width of at least one of the source region and the drain region, and
• wherein the ohmic contact layer is formed to cover an upper surface end portion of the insulating film, an upper surface of the semiconductor thin film, and an end surface of the semiconductor thin film in a channel direction, except for a portion of the channel region.

A thin film transistor comprising:

• a semiconductor thin film comprising a source region, a drain region and a channel region;
• a gate insulating film formed on one surface of the semiconductor thin film;
• a gate electrode formed to be opposite to the semiconductor thin film with the gate insulating film therebetween;
• a source electrode and a drain electrode electrically connected to the semiconductor thin film;
• and
• an insulating film formed on the channel region of the semiconductor thin film corresponding to the gate electrode,
• wherein a width of the channel region is larger than a width of at least one of the source region and the drain region,
• wherein the semiconductor thin film comprises an exposed resistance-reduced surface that is not covered with the insulating film, and
• wherein the source electrode and the drain electrode are respectively formed to cover an upper surface end portion of the insulating film, an upper surface of the semiconductor thin film, and an end surface of the semiconductor thin film in a channel direction, except for a portion of the channel region.