H10D 64/602
Heterojunction gate electrodes for fets
Official title: {Heterojunction gate electrodes for FETs}
H10D64/602 (Heterojunction gate electrodes for fets) appears on 317 US grants and 298 published applications in this corpus.
Search patents in H10D- Granted patents
- 317
- Published applications
- 298
- Assignees
- 126
- Inventors
- 552
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 5 | 0 |
| 1988 | 8 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 0 | 1 |
| 2003 | 0 | 2 |
| 2004 | 2 | 0 |
| 2005 | 0 | 3 |
| 2006 | 3 | 4 |
| 2007 | 2 | 6 |
| 2008 | 2 | 11 |
| 2009 | 2 | 11 |
| 2010 | 7 | 13 |
| 2011 | 11 | 10 |
| 2012 | 6 | 10 |
| 2013 | 9 | 16 |
| 2014 | 16 | 14 |
| 2015 | 18 | 20 |
| 2016 | 24 | 25 |
| 2017 | 21 | 25 |
| 2018 | 21 | 12 |
| 2019 | 18 | 15 |
| 2020 | 19 | 26 |
| 2021 | 18 | 19 |
| 2022 | 14 | 21 |
| 2023 | 19 | 14 |
| 2024 | 20 | 6 |
| 2025 | 8 | 7 |
| 2026 | 3 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method for manufacturing the same2 Jun 2026US 12,648,166 B2United Microelectronics Corp.
- Manufacturable gallium containing electronic devices27 Jan 2026US 12,538,537 B2KYOCERA SLD Laser, Inc.
- P-channel enhancement mode semiconductor device and method for manufacturing the same6 Jan 2026US 12,520,515 B2Innoscience (Suzhou) Technology Co., Ltd.
- Semiconductor device18 Nov 2025US 12,477,771 B2Nuvoton Technology Corporation Japan
- Manufacturable gallium and nitrogen containing single frequency laser diode4 Nov 2025US 12,464,802 B2KYOCERA SLD Laser, Inc.
- Iii-n dual gate devices24 Sep 2026US 2026/0293180 A1
- Gallium nitride semiconductor device and preparation method therefor13 Aug 2026US 2026/0239649 A1Csmc Technologies Fab2 Co., Ltd.
- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
- Passivation and High Temperature Oxidation of Iridium Oxide Schottky Contacts for III-Nitride Devices30 Apr 2026US 2026/0123000 A1The Board of Trustees of the Leland Stanford Junior University
- Manufacturable gallium and nitrogen containing single frequency laser diode12 Feb 2026US 2026/0047178 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFETs with strained well regions215US 9,859,380 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Semiconductor device with hole conduction via strained lattice145US 4,665,415 AInternational Business Machines Corporation · 1987
- DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate143US 6,031,263 AMicron Technology, Inc. · 2000
- High electron mobility transistor139US 5,144,378 AFujitsu Limited · 1992