Iii-n dual gate devices
OwnerMatthew GUIDRY, Pawana SHRESTHA +1inventors
InventorsMatthew GUIDRY, Pawana SHRESTHA, Brian ROMANCZYK
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Abstract
III-N dual gate devices and methods of fabricating III-N dual gate devices. An example semiconductor device includes a III-N backbarrier, a III-N channel layer over the III-N backbarrier, and a two dimensional electron gas (2 DEG) channel in the III-N channel layer. The semiconductor device includes a source contact and a drain contact and, between the source contact and the drain contact, a first gate contact and a second gate contact. The semiconductor device includes, between the first and second gate contacts, an n+ GaN contact coupled to the III-N channel layer in a connection region.
Claims20
A semiconductor device comprising:
- a III-N backbarrier layer;
- a III-N channel layer over the III-N backbarrier layer;
- a 2 DEG channel in the III-N channel layer;
- a source contact coupled to the III-N channel layer;
- a drain contact coupled to the III-N channel layer and spaced apart from the source contact along a length of the semiconductor device;
- between the source contact and the drain contact, a first gate contact and a second gate contact coupled to the III-N channel layer;
- an n+ GaN contact coupled to the III-N channel layer in a connection region between the first gate contact and the second gate contact.
A semiconductor device comprising:
- a III-N channel layer;
- a III-N barrier layer over the III-N channel layer;
- a 2 DEG channel in the III-N channel layer;
- a source contact coupled to the III-N channel layer;
- a drain contact coupled to the III-N channel layer and spaced apart from the source contact along a width of the semiconductor device;
- between the source contact and the drain contact, a first gate contact above the III-N barrier layer and a second gate contact above the III-N barrier layer;
- an n+ GaN contact coupled to the III-N barrier layer in a connection region between the first gate contact and the second gate contact, wherein the n+ GaN contact comprises Ga-polar GaN.
A method of fabricating a semiconductor device, the method comprising:
- forming a III-N channel layer over a III-N backbarrier layer, thereby inducing a 2 DEG channel in the III-N channel layer;
- forming source and drain contacts coupled to the III-N channel layer, wherein the source and drain contacts are spaced apart along a length of the semiconductor device;
- forming an n+ GaN contact coupled to the III-N channel layer in a connection region;
- and
- forming first and second gate contacts coupled to the III-N channel layer, wherein the first and second gate contacts are between the source and drain contacts, and wherein the n+ GaN contact is between the first gate contact and the second gate contact.
Dependencies are inferred from the claim text.