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US 12,648,166 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorsYen-Hsing Chen, Chun-Liang Kuo, Tsung-Mu Yang, Yu-Ren Wang
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a channel layer on the substrate, a first barrier layer on the channel layer, a second barrier layer on the first barrier layer, and a gate element on the second barrier layer. The first barrier layer includes a first material with a first band gap, the second barrier layer includes a second material with a second band gap, and the first band gap is greater than the second band gap.
Claims16
A semiconductor device, comprising:
- a substrate;
- a channel layer on the substrate;
- a first barrier layer on the channel layer;
- a second barrier layer on the first barrier layer;
- a gate element on the second barrier layer;
- and
- a passive layer disposed conformally along a sidewall of the second barrier layer and an upper surface of the first barrier layer,
- wherein the first barrier layer comprises a first material with a first band gap, the second barrier layer comprises a second material with a second band gap, and the first band gap is greater than the second band gap, the first barrier layer has a first aluminum content, the second barrier layer has a second aluminum content, and the first aluminum content is greater than the second aluminum content.
5 more elements
Dependencies are inferred from the claim text.