H10D 64/605
Source, drain, or gate electrodes for fets comprising highly resistive materials
Official title: {Source, drain, or gate electrodes for FETs comprising highly resistive materials}
H10D64/605 (Source, drain, or gate electrodes for fets comprising highly resistive materials) appears on 173 US grants and 139 published applications in this corpus.
Search patents in H10D- Granted patents
- 173
- Published applications
- 139
- Assignees
- 81
- Inventors
- 367
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 1 |
| 2002 | 4 | 1 |
| 2003 | 1 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 2 |
| 2013 | 0 | 4 |
| 2014 | 2 | 4 |
| 2015 | 7 | 11 |
| 2016 | 8 | 9 |
| 2017 | 9 | 15 |
| 2018 | 15 | 13 |
| 2019 | 17 | 16 |
| 2020 | 15 | 12 |
| 2021 | 13 | 12 |
| 2022 | 6 | 7 |
| 2023 | 5 | 6 |
| 2024 | 8 | 7 |
| 2025 | 7 | 6 |
| 2026 | 5 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device15 Sep 2026US 12,740,157 B2Nuvoton Technology Corporation Japan
- Semiconductor device including trench transistor cell units18 Aug 2026US 12,713,634 B2Infineon Technologies AG
- Modularized inexpensive detection of cerebral spinal fluid for medical applications30 Jun 2026US 12,669,464 B2University of Florida Research Foundation, Inc.
- Thin film transistor, manufacturing method for the same, and display substrate16 Jun 2026US 12,660,288 B2Boe Technology Group Co., Ltd.
- Semiconductor device6 Jan 2026US 12,520,570 B2Fuji Electric Co., Ltd.
- Semiconductor device and method of manufacturing the same27 Aug 2026US 2026/0255628 A1Powerchip Semiconductor Manufacturing Corporation
- Semiconductor device2 Jul 2026US 2026/0190419 A1Samsung Electronics Co., Ltd.
- Semiconductor device25 Jun 2026US 2026/0181993 A1Samsung Electronics Co., Ltd.
- Semiconductor device30 Apr 2026US 2026/0123031 A1Fuji Electric Co., Ltd.
- Semiconductor device and method of forming the same23 Apr 2026US 2026/0114018 A1United Microelectronics Corp.
Most cited
By later US patents
- Self-aligned overlap MOSFET and method of fabrication142US 5,091,763 AIntel Corporation · 1992
- Three-terminal semiconductor device and related semiconductor devices90US 5,828,101 AKabushiki Kaisha Toshiba · 1998
- Solid state RF switch with high cutoff frequency77US 6,486,511 B1Northrop Grumman Corporation · 2002
- Method of making LDD with polysilicon and dielectric spacers56US 5,498,555 AUnited Microelectronics Corp. · 1996
- Lateral power MOSFET with improved gate design55US 6,084,277 APower Integrations, Inc. · 2000