Three-terminal semiconductor device and related semiconductor devices
AssigneeKabushiki Kaisha Toshiba
InventorKoichi Endo
Life of this patent
Estimating the term…
Abstract
A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main current directly controlled by the gate electrodes flows in parallel with the surface of the semiconductor and is distributed vertically to the surface of the semiconductor. The width W of the channel is freely increased without regard to the surface area of the semiconductor.
Claims169
A semiconductor device comprising:
- a) a substrate having at least one main surface;
- b) a first semiconductor region formed on or in at least a part of the main surface of the substrate;
- c) a second semiconductor region serving as a first main electrode region formed in a part of the first semiconductor region;
- d) a third semiconductor region serving as a second main electrode region formed apart from the second semiconductor region in a part of the first semiconductor region;
- e) at least one gate trench formed in a part of the first semiconductor region between the second and third semiconductor regions from a main surface of first semiconductor region along a direction toward the substrate;
- f) a gate insulating film formed on a side-wall of the gate trench;
- and
- g) a buried gate electrode buried in at least a part of a space defined by the gate insulating film in the gate trench, so as to form a channel between the second and third semiconductor regions and to directly control main currents conducting between the first and second main electrode regions a direction of the main currents flowing in the channel being substantially in parallel with the main surface of the first semiconductor region, the main currents being distributed vertically to the main surface of the first semiconductor region so as to allow a part of the main currents to move in a deep position of the channel.
A semiconductor device comprising;
- a) a substrate having at least one main surface;
- b) a first semiconductor region formed on or in at least a part of the main surface of the substrate and having a main surface that is substantially in parallel with the main surface of the substrate;
- c) a second semiconductor region serving as a first main electrode region formed in a part of the first semiconductor region;
- d) a third semiconductor region serving as a second main electrode region formed apart from the second semiconductor region in a part of the first semiconductor region;
- e) at least one gate trench formed in a part of the first semiconductor regions and having side-walls substantially vertical to the main surface of the first semiconductor region;
- f) a fourth semiconductor region formed on the side-walls of the gate trench and having a larger forbidden band gap than that of the first semiconductor region;
- and
- g) a buried gate electrode buried in at least a part of a space defined by the fourth semiconductor region in the gate trench,
- wherein when the first and second main electrode regions passing a main current between them, a direction of the main current is substantially in parallel with the main surface of the first semiconductor region in vicinity of the buried gate electrode that controls the main current, the main current being distributed vertically with respect to the main surface of the first semiconductor region.
A semiconductor device having first and a second main electrode regions formed in a semiconductor region, a control electrode for controlling main currents flowing between the first and second main electrode regions, and a trench formed in the semiconductor region so that a space defined by the trench forms a channel directed along a horizontal direction for passing the main currents so that the main currents in the channel flow in parallel with a main surface of the semiconductor region and are distributed vertically with respect to the main surface of the semiconductor region so as to allow a part of the main currents to move in a deep position of the channel.
A semiconductor device having a channel region directed along a horizontal direction for passing a main currents conducting between first and second main electrode regions, wherein a geometrical configuration of the channel region is defined by a couple of depletion layers so that the main currents in the channel region flow horizontally in parallel with a main surface of a first semiconductor region of a first conductivity type in which the depletion layers are formed and are distributed vertically to the main surface of the first semiconductor region so as to allow a part of the main currents to move in a deep position of the channel.
Dependencies are inferred from the claim text.