US 2026/0255628 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A method of manufacturing a semiconductor device is provided. The manufacturing method includes the following steps. An element isolation structure is formed in a substrate to define an active region. The active region includes multiple edge regions and a central region located between the edge regions. Then, a well region is formed in the active region. Multiple lightly-doped drain (LDD) regions are first formed in the well region. Then, a gate structure is formed on the substrate and across the active region. Due to the LDD regions, an average doping concentration in the edge region below the gate structure is lower than an average doping concentration in the central region below the gate structure. Multiple source/drain regions are formed in the LDD regions.

Claims17

Dependent claims

A method of manufacturing a semiconductor device, comprising:

forming an element isolation structure in a substrate to define an active region, wherein the active region comprises a plurality of edge regions and a central region located between the plurality of edge regions;
forming a well region in the active region;
forming a plurality of lightly-doped drain regions in the well region;
forming a gate structure on the substrate and across the active region, wherein due to the plurality of lightly-doped drain regions, an average doping concentration in the edge region below the gate structure is lower than an average doping concentration in the central region below the gate structure;
and
forming a source/drain region in the plurality of lightly-doped drain regions.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims17