Semiconductor device including trench transistor cell units

A semiconductor device, comprising:

• a semiconductor body comprising a trench transistor cell array, wherein the trench transistor cell array comprises a first trench transistor cell unit and a second trench transistor cell unit, wherein transistor cells based on the first trench transistor cell unit and transistor cells based on the second trench transistor cell unit are electrically connected in parallel;
• a first internal gate resistor connected in series between a gate electrode of the first trench transistor cell unit and a gate pad;
• and
• a second internal gate resistor connected in series between the gate electrode of the second trench transistor cell unit and the gate pad,
• wherein the first internal gate resistor is smaller than the second internal gate resistor,
• wherein an absolute value of dU/dt at turning on a nominal current of the transistor cell array is at least 50% of a dU/dt at turning on 10% of the nominal current of the transistor cell array, dU/dt being the temporal derivate of a voltage U between load terminals (L1, L2) of the trench transistor cell array.

A method for manufacturing a semiconductor device, the method comprising:

• forming a trench transistor cell array in a semiconductor body, wherein the trench transistor cell array comprises a first trench transistor cell unit and a second trench transistor cell unit;
• and
• electrically connecting in parallel transistor cells based on the first trench transistor cell unit and transistor cells based on the second trench transistor cell unit,
• wherein the first trench transistor cell unit has a first threshold voltage,
• wherein the second trench transistor cell unit has a second threshold voltage larger than the first threshold voltage,
• wherein an absolute value of dU/dt at turning on a nominal current of the transistor cell array is at least 50% of an absolute value of dU/dt at turning on 10% of the nominal current of the transistor cell array, dU/dt being the temporal derivate of a voltage U between load terminals of the trench transistor cell array.