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US 6,084,277 AGranted
Lateral power MOSFET with improved gate design
AssigneePower Integrations, Inc.
InventorsDonald R. Disney, Alex B. Djenguerian
Life of this patent
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Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate design in which the gate structure is coupled to the gate electrode through contacts at a plurality of locations. The gate electrode is disposed over the gate structure along the length of a MOSFET finger. In one embodiment, the gate electrode is coupled to the gate structure through contacts at the ends of the MOSFET finger such that there is a contact-free portion of the gate region between the contacts.
Claims54
A field effect device, comprising:
- a source region, a drain region and a channel region located between the source region and the drain region;
- a gate structure disposed over the channel region, the gate structure having a first contact region and a second contact region separated by a contact-free region;
- a gate electrode coupled to the gate structure through first and second contacts, the first and second contacts coupled to the gate structure in the first and second contact regions, respectively;
- a source electrode coupled to the source region, wherein a width of the source electrode proximate to the contact-free region is greater than a width of the source electrode proximate to the first and second contact regions such that an overlap of the gate structure by the source electrode is greater in the contact-free region in comparison with the first and second contact regions;
- and
- a field plate including the gate structure disposed over the channel region and extending toward the drain region.
3 more elements
A field effect device, comprising:
- a source region, a drain region and a channel region located between the source region and the drain region;
- a gate structure disposed over the channel region, the gate structure having a first end region and a second end region opposite the first end region, the gate structure having a contact-free region between the first end region and the second end region;
- a gate electrode coupled to the gate structure through a first contact and a second contact, the first contact coupled to the gate structure in the first end region and the second contact coupled to the gate structure in the second end region;
- a source electrode coupled to the source region, wherein a width of the source electrode proximate to the contact-free region is greater than a width of the source electrode proximate to the first and second end regions such that an overlap of the gate structure by the source electrode is greater in the contact-free region in comparison with the first and second end regions;
- and
- a field plate including the gate structure disposed over the channel region and extending toward the drain region.
3 more elements
A field effect device, comprising:
- a source region, a drain region and a channel region located between the source region and the drain region;
- a gate structure disposed over the channel region, the gate structure having a first end region, a center region and a second end region, the gate structure further having a first contact-free region between the first end region and the center region, the gate structure further having a second contact-free region between the center region and the second end region;
- a gate electrode coupled to the gate structure through a first contact, a second contact and a center contact, the first contact coupled to the gate structure in the first end region, the center contact coupled to the gate structure in the center region and the second contact coupled to the gate structure in the second end region;
- and
- a source electrode coupled to the source region, wherein a width of the source electrode proximate to the first and second contact-free regions is greater than a width of the source electrode proximate to the first, center and second end regions such that an overlap of the gate structure by the source electrode is greater in the first and second contact-free region in comparison with the first, center and second end regions.
2 more elements
A field effect device, comprising:
- a source region, a drain region and a channel region located between the source region and drain region;
- a gate structure disposed over the channel region, the gate structure having a first region and a second region separated by an intermediate region;
- a gate electrode coupled to the gate structure through first and second contacts, the first and second contacts coupled to the gate structure in the first and second regions, respectively, such that a resistance from the gate electrode to the intermediate region is substantially greater than a resistance from the gate electrode to the first and second regions due to a sheet resistance of the gate structure;
- and
- a source electrode coupled to the source region, wherein a width of the source electrode proximate to the intermediate region is greater than a width of the source electrode proximate to the first and second regions such that an overlap of the gate structure by the source electrode is greater in the intermediate region in comparison with the first and second regions;
- and
- a field plate including the gate structure disposed over the channel region and extending toward the drain region.
4 more elements
A field effect device, comprising:
- a source region, a drain region and a channel region located between the source region and the drain region;
- a gate structure disposed over the channel region, the gate structure having a first contact region and a second contact region separated by a contact-free region;
- a source electrode coupled to the source region through an insulating layer, wherein a width of the source electrode proximate to the contact-free region is greater than a width of the source electrode proximate to the first and second contact regions such that an overlap of the gate structure by the source electrode is greater in the contact-free region in comparison with the first and second contact regions;
- a drain electrode coupled to the drain region through the insulating layer;
- and
- a gate electrode coupled to the gate structure through the insulating layer through first and second contacts, the first and second contacts coupled to the gate structure in the first and second contact regions, respectively, the gate electrode disposed over the insulating layer over the gate structure.
3 more elements
Dependencies are inferred from the claim text.