Semiconductor device and method for preparing the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present disclosure provides a semiconductor device including a source/drain structure, a dielectric layer, first contact structures, a polysilicon stack, and a second contact structure. The source/drain structure is disposed over a semiconductor substrate. The dielectric layer is disposed over the source/drain structure. The first contact structures penetrates through the dielectric layer and the source/drain structure. The second contact structure is disposed over the polysilicon stack. The polysilicon stack and the second contact structure are disposed between two of the plurality of first contact structures. Each of the first contact structures includes a first liner and a first conductive layer surrounding by the first liner.
Claims5
A method for preparing a semiconductor device, comprising:
- forming a source/drain structure over a semiconductor substrate, wherein the semiconductor substrate comprises an array area and a periphery area;
- forming a dielectric layer over the source/drain structure;
- forming a first contact structure in the periphery area, penetrating through the dielectric layer, comprises:
- performing a first etching process to form a first opening penetrating through the dielectric layer;
- forming a first liner covering a sidewall and a bottom surface of the first opening;
- forming a second liner over the first liner, wherein the first liner and the second liner are made of different materials;
- and
- filling a remaining portion of the first opening with a first conductive layer after the second liner is formed;
- forming a polysilicon stack in the array area and over the source/drain structure;
- and
- forming a second contact structure over the polysilicon stack.
Dependencies are inferred from the claim text.