H10D 64/663
The additional layers comprising a silicide layer contacting the layer of silicon
Official title: {the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates}
H10D64/663 (The additional layers comprising a silicide layer contacting the layer of silicon) appears on 1,073 US grants and 1,046 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,073
- Published applications
- 1,046
- Assignees
- 259
- Inventors
- 1,836
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 10 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 8 | 0 |
| 1992 | 6 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 7 | 0 |
| 1996 | 8 | 0 |
| 1997 | 12 | 0 |
| 1998 | 23 | 0 |
| 1999 | 26 | 0 |
| 2000 | 26 | 0 |
| 2001 | 45 | 17 |
| 2002 | 29 | 40 |
| 2003 | 34 | 23 |
| 2004 | 27 | 36 |
| 2005 | 26 | 43 |
| 2006 | 28 | 60 |
| 2007 | 25 | 49 |
| 2008 | 28 | 62 |
| 2009 | 42 | 65 |
| 2010 | 51 | 43 |
| 2011 | 57 | 53 |
| 2012 | 35 | 36 |
| 2013 | 45 | 60 |
| 2014 | 70 | 67 |
| 2015 | 56 | 44 |
| 2016 | 49 | 47 |
| 2017 | 35 | 25 |
| 2018 | 27 | 28 |
| 2019 | 29 | 32 |
| 2020 | 28 | 28 |
| 2021 | 21 | 40 |
| 2022 | 26 | 41 |
| 2023 | 29 | 30 |
| 2024 | 32 | 29 |
| 2025 | 29 | 28 |
| 2026 | 4 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Semiconductor device structure and methods of forming the same25 Aug 2026US 12,720,824 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor power devices having doped and silicided polysilicon temperature sensors therein5 May 2026US 12,622,045 B2North Carolina State University
- Transistor arrays with controllable gate voltage20 Jan 2026US 12,532,534 B2GLOBALFOUNDRIES U. S. Inc.
- Small grain size polysilicon engineering for threshold voltage mismatch improvement30 Dec 2025US 12,512,322 B2Texas Instruments Incorporated
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Semiconductor device and semiconductor memory24 Sep 2026US 2026/0293141 A1Kioxia Corporation
- Semiconductor device and method for preparing the same2 Jul 2026US 2026/0190315 A1Nanya Technology Corporation
- Semiconductor device and method for preparing the same2 Jul 2026US 2026/0190429 A1Nanya Technology Corporation
- Semiconductor device and method for preparing the same2 Jul 2026US 2026/0190431 A1Nanya Technology Corporation
Most cited
By later US patents
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Method of forming a transistor with a strained channel317US 6,492,216 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors203US 4,510,670 ASiemens Aktiengesellschaft · 1985
- Transistor with low resistance tip and method of fabrication in a CMOS process173US 6,165,826 AIntel Corporation · 2000