Semiconductor power devices having doped and silicided polysilicon temperature sensors therein
AssigneeNorth Carolina State University
InventorBantval Jayant Baliga
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Abstract
A power device includes a semiconductor substrate having first and second current carrying terminals on respective first and second opposing surfaces thereof. A silicided polysilicon temperature sensor and silicided polysilicon gate electrode are provided on the first surface. A source region of first conductivity type and a shielding region of second conductivity type are provided in the semiconductor substrate. The shielding region forms a P-N rectifying junction with the source region, and extends between the silicided polysilicon temperature sensor and the second current carrying terminal. A field oxide insulating region is provided, which extends between the shielding region and the silicided polysilicon temperature sensor.
Claims20
A power semiconductor device, comprising:
- a semiconductor substrate having a first current carrying terminal on a first surface thereof and a second current carrying terminal on a second surface thereof opposing the first surface;
- and
- a silicided polysilicon temperature sensor on the first surface.
A power semiconductor device, comprising:
- a silicon carbide (SiC) substrate having a first source electrode of a first field effect transistor (FET) and a second source electrode of a second FET at spaced-apart locations on a first surface thereof;
- and
- first and second silicided polysilicon temperature sensors associated with the first and second FETS, respectively, on the first surface.
A power semiconductor device, comprising:
- a semiconductor substrate having an insulated-gate transistor therein;
- and
- a silicided polysilicon temperature sensor having a first current carrying terminal electrically connected to a first current carrying terminal of the insulated-gate transistor.
Dependencies are inferred from the claim text.