Semiconductor device and method for preparing the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor device including a source/drain structure, a dielectric layer, first contact structures, a polysilicon stack, and a second contact structure. The source/drain structure is disposed over a semiconductor substrate. The dielectric layer is disposed over the source/drain structure. The first contact structures penetrates through the dielectric layer and the source/drain structure. The second contact structure is disposed over the polysilicon stack. The polysilicon stack and the second contact structure are disposed between two of the plurality of first contact structures. Each of the first contact structures includes a first liner and a first conductive layer surrounding by the first liner.
Claims14
A semiconductor device, comprising:
- a source/drain structure disposed over a semiconductor substrate;
- a dielectric layer disposed over the source/drain structure;
- a plurality of first contact structures, penetrating through the dielectric layer and the source/drain structure;
- a polysilicon stack;
- and
- a second contact structure, disposed over the polysilicon stack,
- wherein the polysilicon stack and the second contact structure are disposed between two of the plurality of first contact structures,
- wherein each of the plurality of first contact structures comprises:
- a first liner;
- and
- a first conductive layer, surrounding by the first liner.
Dependencies are inferred from the claim text.