Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device

A manufacturing method for a power MOSFET device having a source region embedded via epitaxial growth, comprising:

• S100, growing an epitaxial layer on a silicon substrate;
• S200, forming a trench gate structure on the epitaxial layer, forming a silicon platform on two sides of the trench gate structure;
• S300, forming a body region on an upper part of the epitaxial layer by injecting impurities in the upper part of the epitaxial layer;
• activating the impurities in the body region through a thermal process;
• oxidizing a surface of the trench gate structure and an exposed silicon surface of the silicon platform to form a surface oxide layer;
• S400, removing the surface oxide layer formed on the silicon surface of the silicon platform;
• and growing a source region on the silicon platform via epitaxial growth;
• S500, preparing a source contact penetrating the source region and extending into the body region, forming an ohmic contact area at a bottom of the source contact;
• and
• S600, performing subsequent preparing processes.