H10D 64/675
Gate sidewall spacers
Official title: {Gate sidewall spacers}
H10D64/675 (Gate sidewall spacers) appears on 840 US grants and 981 published applications in this corpus.
Search patents in H10D- Granted patents
- 840
- Published applications
- 981
- Assignees
- 143
- Inventors
- 1,417
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 18 | 0 |
| 2000 | 19 | 0 |
| 2001 | 15 | 6 |
| 2002 | 9 | 14 |
| 2003 | 15 | 5 |
| 2004 | 8 | 4 |
| 2005 | 4 | 3 |
| 2006 | 5 | 5 |
| 2007 | 4 | 7 |
| 2008 | 3 | 12 |
| 2009 | 4 | 9 |
| 2010 | 9 | 6 |
| 2011 | 6 | 6 |
| 2012 | 5 | 8 |
| 2013 | 12 | 11 |
| 2014 | 5 | 16 |
| 2015 | 16 | 24 |
| 2016 | 33 | 23 |
| 2017 | 38 | 47 |
| 2018 | 52 | 77 |
| 2019 | 94 | 71 |
| 2020 | 76 | 101 |
| 2021 | 70 | 95 |
| 2022 | 65 | 95 |
| 2023 | 72 | 88 |
| 2024 | 66 | 89 |
| 2025 | 75 | 97 |
| 2026 | 25 | 62 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Integrated circuit structures with cavity spacers6 Oct 2026US 12,757,473 B2Intel Corporation
- Inverted gate cut region29 Sep 2026US 12,751,063 B2International Business Machines Corporation
- Structure of two-dimensional material-based device having air-gap and method for preparing same1 Sep 2026US 12,727,207 B2Nanjing University
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium11 Aug 2026US 12,707,704 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including internal spacer layers1 Oct 2026US 2026/0304932 A1Samsung Electronics Co., Ltd.
- Multi-gate transistor24 Sep 2026US 2026/0293297 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor structure17 Sep 2026US 2026/0282441 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for producing gate stack sidewall spacers240US 7,253,123 B2APPLIED Materials.Inc. · 2007
- Gate stack for high performance sub-micron CMOS devices236US 6,596,599 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2003
- Air gap spacer formation for nano-scale semiconductor devices176US 10,418,277 B2International Business Machines Corporation · 2019
- Nanosheet MOSFET with full-height air-gap spacer150US 9,362,355 B1International Business Machines Corporation · 2016
- Method of fabricating a MOS device having a gate-side air-gap structure136US 5,736,446 APowerchip Semiconductor Corp. · 1998