US 2026/0282441 A1 · METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Abstract

Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a first stack structure over a substrate. The method includes forming an isolation structure surrounding the first stack structure, and forming a dummy gate structure over the first stack structure. The method includes removing a portion of the first stack structure to form an S/D recess, and forming an S/D structure in the S/D recess. The method includes removing the first semiconductor material layers to form nanostructures, and replacing the dummy gate structure with a gate structure. The method includes removing the substrate to expose a bottommost gate dielectric layer, and removing a portion of the bottommost gate dielectric layer to form a recess, wherein a sidewall surface of the gate electrode is exposed. The method includes forming a first layer in the recess, wherein the first layer covers the gate electrode.

Claims20

Dependent claims

A method for forming a semiconductor structure, comprising:

forming a first stack structure protruding from a front side of a substrate, wherein the first stack structure comprises first semiconductor material layers and second semiconductor material layers alternately stacked;
forming an isolation structure surrounding the first stack structure;
forming a dummy gate structure over the first stack structure;
removing a portion of the first stack structure to form an S/D recess;
forming an S/D structure in the S/D recess;
removing the first semiconductor material layers to form nanostructures;
replacing the dummy gate structure with a gate structure, wherein the nanostructures are surrounded by the gate structure, and wherein the gate structure comprises gate dielectric layers and gate electrode;
removing the substrate to expose a bottommost gate dielectric layer;
removing a portion of the bottommost gate dielectric layer to form a recess, wherein a sidewall surface of the gate electrode is exposed;
and
forming a first layer in the recess, wherein the first layer covers the sidewall surface of the gate electrode.

8 more elements

A method for forming a semiconductor structure, comprising:

forming a first stack structure protruding from a front side of a substrate, wherein the first stack structure comprises first semiconductor material layers and second semiconductor material layers alternately stacked;
forming an isolation structure surrounding the first stack structure;
removing a portion of the first stack structure to form an S/D recess;
forming a dielectric layer in the S/D recess;
forming an S/D structure over the dielectric layer;
forming a first S/D contact structure over a front-side of the S/D structure;
removing the first semiconductor material layers to form nanostructures;
forming a gate structure to surround the nanostructures, wherein the gate structure comprises gate dielectric layers and gate electrode;
removing the substrate to form an exposed bottommost gate dielectric layer and an exposed dielectric layer;
and
forming a first layer on the exposed bottommost gate dielectric layer and the exposed dielectric layer.

8 more elements

Dependencies are inferred from the claim text.

Method for forming semiconductor structure

Life of this patent

Method for forming semiconductor structure

Life of this patent

Abstract

Claims20