Structure of two-dimensional material-based device having air-gap and method for preparing same

A structure of a two-dimensional material-based device having an air-gap comprising a substrate, wherein a gate, a dielectric, a two-dimensional material-based film and source and drain electrodes are sequentially arranged on the upper side of the substrate, and an interior of the structure contains an air-gap spacer, i.e., the air-gap,

• wherein the two-dimensional material-based film is made of any one of a transition metal sulfide, a transition metal oxide, a transition metal selenide, an oxide semiconductor, graphene, a two-dimensional perovskite film, a topological insulator, or a Dirac semimetal, and the source and drain electrodes are made of one or a composition of more of a metal, a semimetal, a conductive oxide, a conductive nitride, or a conductive carbide,
• wherein the gate has a thickness of >10 nm;
• the thickness of the dielectric and the thickness of the two-dimensional material-based film are less than the thickness of the gate;
• the gate is made of one or a composition of more of a metal, a semimetal, a conductive oxide, a conductive nitride, or a conductive carbide;
• the shape of the gate includes a circle, an omega shape, a rectangle, a trapezoid, or an inverted trapezoid;
• the gas in the air-gap is identical to that of the external atmosphere.