H10D 64/679
Comprising air gaps
Official title: {comprising air gaps}
H10D64/679 (Comprising air gaps) appears on 642 US grants and 745 published applications in this corpus.
Search patents in H10D- Granted patents
- 642
- Published applications
- 745
- Assignees
- 95
- Inventors
- 987
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 13 | 0 |
| 2000 | 11 | 0 |
| 2001 | 6 | 5 |
| 2002 | 5 | 11 |
| 2003 | 9 | 4 |
| 2004 | 5 | 2 |
| 2005 | 4 | 3 |
| 2006 | 3 | 2 |
| 2007 | 1 | 2 |
| 2008 | 1 | 6 |
| 2009 | 1 | 4 |
| 2010 | 3 | 0 |
| 2011 | 2 | 3 |
| 2012 | 2 | 3 |
| 2013 | 7 | 7 |
| 2014 | 2 | 6 |
| 2015 | 10 | 15 |
| 2016 | 22 | 13 |
| 2017 | 23 | 33 |
| 2018 | 44 | 64 |
| 2019 | 73 | 56 |
| 2020 | 61 | 84 |
| 2021 | 63 | 84 |
| 2022 | 57 | 87 |
| 2023 | 63 | 77 |
| 2024 | 59 | 71 |
| 2025 | 65 | 76 |
| 2026 | 21 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Integrated circuit structures with cavity spacers6 Oct 2026US 12,757,473 B2Intel Corporation
- Inverted gate cut region29 Sep 2026US 12,751,063 B2International Business Machines Corporation
- Structure of two-dimensional material-based device having air-gap and method for preparing same1 Sep 2026US 12,727,207 B2Nanjing University
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium11 Aug 2026US 12,707,704 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor structure17 Sep 2026US 2026/0282441 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including gate electrode on two spaced apart semiconductor patterns17 Sep 2026US 2026/0282483 A1Samsung Electronics Co., Ltd.
- Air gap spacer for metal gates16 Jul 2026US 2026/0206304 A1Adeia Semiconductor Solutions LLC
Most cited
By later US patents
- Gate stack for high performance sub-micron CMOS devices236US 6,596,599 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2003
- Air gap spacer formation for nano-scale semiconductor devices176US 10,418,277 B2International Business Machines Corporation · 2019
- Nanosheet MOSFET with full-height air-gap spacer150US 9,362,355 B1International Business Machines Corporation · 2016
- Method of fabricating a MOS device having a gate-side air-gap structure136US 5,736,446 APowerchip Semiconductor Corp. · 1998
- Vertical transistor with air-gap spacer124US 9,368,572 B1International Business Machines Corporation · 2016