Nanosheet MOSFET with full-height air-gap spacer
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Michael A. Guillorn, Xin Miao
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a gate positioned on a substrate; a nanosheet that extends through the gate, protrudes from a sidewall of the gate, and forms a recess between the substrate and the nanosheet; a dielectric spacer disposed in the recess; a source/drain contact positioned on a source/drain disposed on the substrate adjacent to the gate; an air gap spacer positioned along the sidewall of the gate and in contact with a dielectric material disposed on the nanosheet, the air gap spacer being in contact with the source/drain contact; and an interlayer dielectric (ILD) disposed on the air gap spacer.
Claims6
A semiconductor device, comprising:
- a gate positioned on a substrate;
- a nanosheet that extends through the gate, protrudes from a sidewall of the gate, and forms a recess between the substrate and the nanosheet;
- a dielectric spacer disposed in the recess;
- a source/drain contact positioned on a source/drain disposed on the substrate adjacent to the gate;
- an air gap spacer positioned along the sidewall of the gate and in contact with a dielectric material disposed on the nanosheet, the air gap spacer being in contact with the source/drain contact;
- and
- an interlayer dielectric (ILD) disposed on the air gap spacer.
Dependencies are inferred from the claim text.