H10D 64/667
The conductor comprising a layer of alloy material, compound material or organic
Official title: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
H10D64/667 (The conductor comprising a layer of alloy material, compound material or organic) appears on 4,924 US grants and 5,736 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,924
- Published applications
- 5,736
- Assignees
- 451
- Inventors
- 5,767
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 5 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 11 | 0 |
| 1999 | 22 | 0 |
| 2000 | 30 | 0 |
| 2001 | 34 | 16 |
| 2002 | 38 | 23 |
| 2003 | 34 | 31 |
| 2004 | 22 | 48 |
| 2005 | 38 | 86 |
| 2006 | 69 | 108 |
| 2007 | 36 | 104 |
| 2008 | 55 | 143 |
| 2009 | 62 | 149 |
| 2010 | 118 | 162 |
| 2011 | 117 | 178 |
| 2012 | 126 | 203 |
| 2013 | 185 | 241 |
| 2014 | 227 | 270 |
| 2015 | 277 | 410 |
| 2016 | 410 | 404 |
| 2017 | 391 | 404 |
| 2018 | 381 | 393 |
| 2019 | 417 | 392 |
| 2020 | 424 | 434 |
| 2021 | 303 | 304 |
| 2022 | 284 | 291 |
| 2023 | 209 | 283 |
| 2024 | 240 | 233 |
| 2025 | 218 | 253 |
| 2026 | 88 | 173 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Integrated circuit device with reduced N-P boundary effect6 Oct 2026US 12,757,484 B2Intel Corporation
- Semiconductor device29 Sep 2026US 12,751,072 B2United Microelectronics Corp.
- Semiconductor structure and method of forming the same22 Sep 2026US 12,745,446 B2Winbond Electronics Corp.
- Conductive oxygen barrier for complex oxides15 Sep 2026US 12,740,129 B2Imec Vzw
- Gate resistance reduction through low-resistivity conductive layer8 Sep 2026US 12,733,199 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure including an interfacial layer and method of forming same8 Oct 2026US 2026/0314003 A1ASM IP Holding B. V.
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trench isolation with conductive structures8 Oct 2026US 2026/0314033 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0314062 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Method of depositing barrier layer for metal gates592US 6,858,524 B2ASM International N.V. · 2005
- Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same536US 9,029,253 B2ASM IP Holding B. V. · 2015
- Controlled composition using plasma-enhanced atomic layer deposition533US 7,727,864 B2ASM America, Inc. · 2010