H10D 64/669
The conductor further comprising additional layers of alloy material, compound material or
Official title: {the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN}
H10D64/669 (The conductor further comprising additional layers of alloy material, compound material or) appears on 1,497 US grants and 1,812 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,497
- Published applications
- 1,812
- Assignees
- 154
- Inventors
- 2,134
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 11 | 0 |
| 2001 | 5 | 3 |
| 2002 | 8 | 7 |
| 2003 | 7 | 3 |
| 2004 | 3 | 8 |
| 2005 | 5 | 11 |
| 2006 | 14 | 23 |
| 2007 | 9 | 20 |
| 2008 | 8 | 20 |
| 2009 | 10 | 27 |
| 2010 | 14 | 35 |
| 2011 | 25 | 45 |
| 2012 | 31 | 55 |
| 2013 | 51 | 75 |
| 2014 | 62 | 87 |
| 2015 | 73 | 86 |
| 2016 | 101 | 108 |
| 2017 | 126 | 137 |
| 2018 | 112 | 137 |
| 2019 | 135 | 141 |
| 2020 | 156 | 157 |
| 2021 | 105 | 119 |
| 2022 | 110 | 119 |
| 2023 | 81 | 128 |
| 2024 | 103 | 104 |
| 2025 | 95 | 92 |
| 2026 | 27 | 65 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor devices including a cap insulating layer11 Aug 2026US 12,707,905 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple gate patterning methods towards future nanosheet scaling2 Jun 2026US 12,648,181 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same2 Jun 2026US 12,648,205 B2United Semiconductor (Xiamen) Co., Ltd.
- Semiconductor devices2 Jun 2026US 12,648,208 B2Samsung Electronics Co., Ltd.
- Semiconductor device including a transistor having a metal-rich metal oxide layer2 Jun 2026US 12,648,212 B2SK hynix Inc.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0314062 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device24 Sep 2026US 2026/0293298 A1Samsung Electronics Co., Ltd.
- Gate structures17 Sep 2026US 2026/0282528 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof10 Sep 2026US 2026/0271380 A1Nanya Technology Corporation
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices with varying threshold voltage and fabrication methods thereof487US 9,748,145 B1Globalfoundries Inc. · 2017
- Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures419US 10,229,833 B2ASM IP Holding B. V. · 2019
- NbMC layers418US 10,211,308 B2ASM IP Holding B. V. · 2019
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017