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US 10,211,308 B2Granted
NbMC layers
AssigneeASM IP Holding B.V.
InventorsChiyu Zhu, Timo Asikainen, Robert Brennan Milligan
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Abstract
Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.
Claims15
A method of forming a thin-film structure, the method comprising the steps of:
- providing a substrate within a reaction space;
- using a first cyclic deposition process, forming a layer comprising NbAlC, on the surface of the substrate, wherein the first cyclic deposition process comprises at least one deposition cycle comprising exposing the substrate to a first precursor comprising Nb and a second precursor comprising aluminum and carbon;
- and
- using a second cyclic deposition process comprising at least one deposition cycle comprising exposing the substrate alternately to a third precursor comprising Nb and a fourth precursor comprising a metal and carbon, wherein at least one of:
- the third precursor differs from the first precursor and the fourth precursor differs from the second precursor, and wherein the first cyclic deposition process and the second cyclic deposition process have at least one precursor that differs,
- wherein a composition of the layer comprising NbAlC comprises about 30 atomic percent to about 60 atomic percent carbon, about 10 atomic percent to about 40 atomic percent niobium, and about 10 atomic percent to about 40 atomic percent aluminum,
- wherein a thickness of the layer comprising NbAlC is less than 50 Å, and
- wherein an effective work function of the structure comprising the layer comprising NbAlC is less than 4.4 eV.
5 more elements
Dependencies are inferred from the claim text.