Semiconductor structure and method of manufacturing the same

A method, comprising:

• providing a fin including a plurality of semiconductor channel layers interposed by a plurality of sacrificial layers;
• removing the plurality of sacrificial layers to form a gap between adjacent semiconductor channel layers;
• after removing the plurality of sacrificial layers, forming an aluminum-containing layer surrounding at least one of the plurality of semiconductor channel layers, wherein after forming the aluminum-containing layer, a space remains between portions of the aluminum-containing layer disposed on opposing surfaces of the adjacent semiconductor channel layers;
• and
• forming a nitrogen-containing layer over the aluminum-containing layer, wherein the nitrogen-containing layer surrounds the at least one of the plurality of semiconductor channel layers, and wherein the nitrogen-containing layer substantially fills the space between the portions of the aluminum-containing layer disposed on opposing surfaces of the adjacent semiconductor channel layers.

A semiconductor device, comprising:

• a plurality of semiconductor channel layers disposed over a substrate;
• a gate dielectric layer surrounding at least one of the plurality of semiconductor channel layers;
• an aluminum-containing layer formed over the gate dielectric layer and surrounding the at least one of the plurality of semiconductor channel layers;
• and
• a Ti-based layer formed over the aluminum-containing layer and surrounding the at least one of the plurality of semiconductor channel layers, wherein a first portion of the Ti-based layer surrounding a first semiconductor channel layer of the plurality of semiconductor channel layers merges with a second portion of the Ti-based layer surrounding a second semiconductor channel layer of the plurality of semiconductor channel layers.