Semiconductor device and method of fabricating the same
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsChin-Chun Huang, Rong He, Xiang Wang, You-Di Jhang, Hailong Gu, Jinjian Ouyang, Wen Yi Tan
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Abstract
The present invention provides a semiconductor device and a method of fabricating the same, which includes a substrate, a gate structure, and a dielectric layer. The gate structure is disposed on the substrate and includes an inverted trapezoidal shape. The dielectric layer is disposed on the substrate, and the gate structure is disposed within the dielectric layer. The gate structure includes a metal gate structure or a polysilicon gate structure.
Claims19
A semiconductor device, comprising:
- a substrate;
- a metal gate structure disposed on the substrate, with the metal gate structure comprising an inverted trapezoidal shape, wherein the metal gate structure comprises a high-k dielectric layer in a liner shaped, and a barrier layer and a work function metal layer both in an U-shaped and disposed on the high-k dielectric layer, wherein a bottom surface of the high-k dielectric layer comprises a first width in a horizontal direction, a bottom surface of the barrier layer comprises a second width in the horizontal direction, and the second width is equal to the first width;
- and
- a dielectric layer, disposed on the substrate, wherein the metal gate structure is disposed within the dielectric layer.
A semiconductor device, comprising:
- a substrate;
- a polysilicon gate structure disposed on the substrate, wherein the polysilicon gate structure comprises a dopant having an increasing dopant-concentration gradually increased from top to bottom, wherein a first portion of the polysilicon gate structure has the dopant in a first concentration and has a first width, a second portion of the polysilicon gate structure has the dopant in second concentration and has a second width, the first concentration is lower than the second concentration, and the first width is larger than the second width;
- a dielectric layer, disposed on the substrate, wherein the polysilicon gate structure is disposed within the dielectric layer;
- and
- a gate dielectric layer, disposed on the substrate, below the polysilicon gate structure;
- and
- an interface layer, disposed between the gate dielectric layer and the substrate, wherein the gate dielectric layer and the interface layer both include a third width in a horizontal direction, and the third width is the same as the second width of the second portion of the polysilicon gate structure.
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a polysilicon gate structure on the substrate, wherein the polysilicon gate structure comprises a dopant having an increasing dopant-concentration gradually increased from top to bottom, wherein a first portion of the polysilicon gate structure has the dopant in a first concentration and has a first width, a second portion of the polysilicon gate structure has the dopant in second concentration, the first concentration is lower than the second concentration and has a second width, and an etching rate of the first portion is also lower than an etching rate of the second portion;
- forming a dielectric layer on the substrate, wherein the polysilicon gate structure is formed within the dielectric layer;
- and
- forming a gate dielectric layer on the substrate, below the polysilicon gate structure;
- and
- forming an interface layer between the dielectric layer and the substrate, wherein the dielectric layer and the interface layer both include a third width in a horizontal direction, and the third width is the same as the second width of the second portion of the polysilicon gate structure.
Dependencies are inferred from the claim text.