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US 12,648,212 B2Granted
Semiconductor device including a transistor having a metal-rich metal oxide layer
AssigneeSK hynix Inc.
InventorYoung Gwang Yoon
Life of this patent
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Abstract
A semiconductor device includes a gate dielectric layer over a substrate; a lower gate barrier layer over the gate dielectric layer; and a lower gate electrode over the lower gate barrier layer. The lower gate electrode includes at least one metal-rich metal oxide layer.
Claims20
A semiconductor device comprising:
- a gate dielectric layer over a substrate;
- a lower gate barrier layer over the gate dielectric layer;
- and
- a lower gate electrode over the lower gate barrier layer,
- wherein the lower gate electrode includes a multi-layered structure in which a plurality of metal-rich metal oxide layers has oxygen vacancy concentrations different from each other,
- wherein the at least one of the plurality of metal-rich metal oxide layers has a higher metal mass ratio and a higher oxygen vacancy concentration than a metal oxide according to the Law of Definite Proportions to enhance a work function of the lower gate electrode, and
- wherein the metal mass ratio is defined as a mass ratio of metal ions that are not bonded to oxygen due to an oxygen vacancy.
4 more elements
A semiconductor device comprising:
- an interface insulating layer formed over a substrate;
- a gate dielectric layer formed over the interface insulating layer;
- a lower gate barrier layer formed over the gate dielectric layer;
- a lower gate electrode formed over the lower gate barrier layer;
- an upper gate barrier layer formed over the lower gate electrode;
- and
- an upper gate electrode formed over the upper gate barrier layer,
- wherein the lower gate electrode includes a plurality of metal-rich metal oxide layers having oxygen vacancy concentrations different from each other,
- wherein the plurality of metal-rich metal oxide layers has a higher metal mass ratio and a higher oxygen vacancy concentration than a metal oxide according to the Law of Definite Proportions to enhance a work function of the lower gate electrode, and
- wherein the metal mass ratio is defined as a mass ratio of metal ions that are not bonded to oxygen due to an oxygen vacancy.
7 more elements
A semiconductor device comprising:
- a fin region protruding from a substrate;
- a field insulating layer formed over the substrate and surrounding a lower portion of the fin region;
- an interface insulating layer formed over a surface of the fin region;
- a gate dielectric layer formed over an upper surface of the field insulating layer and an upper surface of the interface insulating layer;
- a lower gate barrier layer formed over the gate dielectric layer;
- and
- a lower gate electrode formed over the lower gate barrier layer,
- wherein the lower gate electrode includes a multi-layered structure in which a plurality of metal-rich metal oxide layers have oxygen vacancy concentrations different from each other,
- wherein the plurality of metal-rich metal oxide layers has a higher metal mass ratio and a higher oxygen vacancy concentration than a metal oxide according to the Law of Definite Proportions to enhance a work function of the lower gate electrode, and
- wherein the metal mass ratio is defined as a mass ratio of metal ions that are not bonded to oxygen due to an oxygen vacancy.
7 more elements
Dependencies are inferred from the claim text.