Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures

A method for forming a transition metal nitride film on a substrate by atomic layer deposition, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a transition metal precursor;
• and
• contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor,
• wherein the method comprises at least one deposition cycle in which the substrate is alternately and sequentially contacted with the first vapor phase reactant and the second vapor phase reactant, and
• wherein the deposition cycle is repeated two or more times.

A method for forming a transition metal nitride film on a substrate by atomic layer deposition, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a transition metal precursor;
• contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor;
• and
• forming the transition metal nitride film to comprise a predominant (200) crystallographic orientation.

A method for forming a transition metal nitride film on a substrate by atomic layer deposition, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a transition metal precursor;
• contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor;
• and
• forming the transition metal nitride film to have an atomic concentration of carbon greater than 0.5%.