Structure including an interfacial layer and method of forming same

A method for forming a structure, the method comprising:

• providing a substrate in a reaction chamber;
• forming at least a portion of an interfacial layer on a surface of the substrate, wherein forming the portion of the interfacial layer comprises:
• forming at least a portion of a first layer comprising silicon oxide on a surface of the substrate, and
• doping the first layer with a dopant comprising a metal;
• and
• forming a high-k dielectric layer on the interfacial layer.

A structure, the structure comprising:

• a substrate comprising a semiconductor;
• an interfacial layer disposed on the semiconductor, wherein the interfacial layer comprises:
• a first sub-layer comprising silicon oxide disposed on the semiconductor, and
• a second sub-layer comprising a metal silicate disposed on the first sub-layer;
• a high-k dielectric layer disposed on the second sub-layer;
• and
• a conductive layer disposed on the high-k dielectric layer.